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单 FET，MOSFET

搜索结果
结果:
45,196
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
结果：45,196
选择
图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypePackage / CaseGradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
CSD13381F4
CSD13381F4
Texas Instruments
MOSFET N-CH 12V 2.1A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
更多的价格
数量
850,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
3-XFDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
12 V
2.1A (Ta)
1.8V, 4.5V
180mOhm @ 500mA, 4.5V
1.4 nC @ 4.5 V
8V
200 pF @ 6 V
500mW (Ta)
3-PICOSTAR
-
FDN338P
FDN338P
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.1268
5+
$0.1197
10+
$0.1127
更多的价格
数量
845,095 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
MOSFET (Metal Oxide)
-
1.5V @ 250µA
20 V
1.6A (Ta)
2.5V, 4.5V
115mOhm @ 1.6A, 4.5V
6.2 nC @ 4.5 V
±8V
451 pF @ 10 V
500mW (Ta)
SOT-23-3
AO3401A
1+
$0.0507
5+
$0.0479
10+
$0.0451
更多的价格
数量
828,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
3-SMD, SOT-23-3 Variant
-
-
MOSFET (Metal Oxide)
-
1.3V @ 250µA
30 V
4A (Ta)
2.5V, 10V
44mOhm @ 4.3A, 10V
12.2 nC @ 4.5 V
±12V
1200 pF @ 15 V
1.4W (Ta)
SOT-23-3
-
NVMFS5832NLT3G
NVMFS5832NLT3G
onsemi
MOSFET N-CH 40V 21A 5DFN
1+
$2.0282
5+
$1.9155
10+
$1.8028
更多的价格
数量
820,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
8-PowerTDFN, 5 Leads
Automotive
-
MOSFET (Metal Oxide)
-
2.4V @ 250µA
40 V
21A (Ta)
4.5V, 10V
4.2mOhm @ 20A, 10V
51 nC @ 10 V
±20V
2700 pF @ 25 V
3.7W (Ta), 127W (Tc)
5-DFN (5x6) (8-SOFL)
AEC-Q101
FDP085N10A
FDP085N10A
onsemi
MOSFET N-CH 100V 96A TO220-3
1+
$2.1549
5+
$2.0352
10+
$1.9155
更多的价格
数量
800,001 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
PowerTrench®
MOSFET (Metal Oxide)
-
4V @ 250µA
100 V
96A (Tc)
10V
8.5mOhm @ 96A, 10V
40 nC @ 10 V
±20V
2695 pF @ 50 V
188W (Tc)
TO-220-3
-
SI2305CDS-T1-GE3
SI2305CDS-T1-GE3
Vishay / Siliconix
MOSFET P-CH 8V 5.8A SOT23-3
1+
$0.1648
5+
$0.1556
10+
$0.1465
更多的价格
数量
718,090 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
TrenchFET®
MOSFET (Metal Oxide)
-
1V @ 250µA
8 V
5.8A (Tc)
1.8V, 4.5V
35mOhm @ 4.4A, 4.5V
30 nC @ 8 V
±8V
960 pF @ 4 V
960mW (Ta), 1.7W (Tc)
SOT-23-3 (TO-236)
-
2N7002KT1G
2N7002KT1G
onsemi
MOSFET N-CH 60V 320MA SOT23-3
1+
$0.0228
5+
$0.0215
10+
$0.0203
更多的价格
数量
710,990 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
2.3V @ 250µA
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
300mW (Ta)
SOT-23-3 (TO-236)
-
IRLML2402TRPBF
IRLML2402TRPBF
Infineon Technologies
MOSFET N-CH 20V 1.2A SOT23
1+
$0.0659
5+
$0.0623
10+
$0.0586
更多的价格
数量
691,859 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
HEXFET®
MOSFET (Metal Oxide)
-
700mV @ 250µA (Min)
20 V
1.2A (Ta)
2.7V, 4.5V
250mOhm @ 930mA, 4.5V
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
540mW (Ta)
Micro3™/SOT-23
-
SI3401A-TP
1+
$0.0254
5+
$0.0239
10+
$0.0225
更多的价格
数量
660,209 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
1.3V @ 250µA
30 V
4.2A (Tj)
2.5V, 10V
60mOhm @ 4.2A, 10V
-
±12V
1050 pF @ 15 V
400mW
SOT-23
-
CSD23280F3
CSD23280F3
Texas Instruments
MOSFET P-CH 12V 1.8A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
更多的价格
数量
636,880 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
3-XFDFN
-
FemtoFET™
MOSFET (Metal Oxide)
-
950mV @ 250µA
12 V
1.8A (Ta)
1.5V, 4.5V
116mOhm @ 400mA, 4.5V
1.23 nC @ 4.5 V
-6V
234 pF @ 6 V
500mW (Ta)
3-PICOSTAR
-
BSS138W-7-F
BSS138W-7-F
Diodes Incorporated
MOSFET N-CH 50V 200MA SOT323
1+
$0.0254
5+
$0.0239
10+
$0.0225
更多的价格
数量
629,426 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
SC-70, SOT-323
-
-
MOSFET (Metal Oxide)
-
1.5V @ 250µA
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
-
±20V
50 pF @ 10 V
200mW (Ta)
SOT-323
-
IRLML2246TRPBF
IRLML2246TRPBF
Infineon Technologies
MOSFET P-CH 20V 2.6A SOT23
1+
$0.0761
5+
$0.0718
10+
$0.0676
更多的价格
数量
623,339 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
HEXFET®
MOSFET (Metal Oxide)
-
1.1V @ 10µA
20 V
2.6A (Ta)
2.5V, 4.5V
135mOhm @ 2.6A, 4.5V
2.9 nC @ 4.5 V
±12V
220 pF @ 16 V
1.3W (Ta)
Micro3™/SOT-23
-
SI2306-TP
1+
$0.0634
5+
$0.0599
10+
$0.0563
更多的价格
数量
615,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
3.16A (Ta)
10V
65mOhm @ 2.5A, 4.5V
4.5 nC @ 5 V
±20V
305 pF @ 15 V
750mW
SOT-23
-
IRFR1205TRPBF
IRFR1205TRPBF
Infineon Technologies
MOSFET N-CH 55V 44A DPAK
1+
$0.5577
5+
$0.5268
10+
$0.4958
更多的价格
数量
603,700 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
HEXFET®
MOSFET (Metal Oxide)
-
4V @ 250µA
55 V
44A (Tc)
10V
27mOhm @ 26A, 10V
65 nC @ 10 V
±20V
1300 pF @ 25 V
107W (Tc)
TO-252AA (DPAK)
-
IRFR1205TRPBF
IRFR1205TRPBF
International Rectifier
IRFR1205 - 12V-300V N-CHANNEL PO
1+
$0.5577
5+
$0.5268
10+
$0.4958
更多的价格
数量
603,700 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
4V @ 250µA
55 V
44A (Tc)
10V
27mOhm @ 26A, 10V
65 nC @ 10 V
±20V
1300 pF @ 25 V
107W (Tc)
D-Pak
DMG1013UW-7
DMG1013UW-7
Diodes Incorporated
MOSFET P-CH 20V 820MA SOT323
1+
$0.0426
5+
$0.0402
10+
$0.0379
更多的价格
数量
602,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
SC-70, SOT-323
-
-
MOSFET (Metal Oxide)
-
1V @ 250µA
20 V
820mA (Ta)
1.8V, 4.5V
750mOhm @ 430mA, 4.5V
0.622 nC @ 4.5 V
±6V
59.76 pF @ 16 V
310mW (Ta)
SOT-323
-
2N7002
2N7002
YANGJIE
SOT-23 N 60V 0.34A Transistors
1+
$0.0203
5+
$0.0192
10+
$0.0180
更多的价格
数量
600,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
-
±20V
50 pF @ 25 V
200mW (Ta)
SOT-23-3
-
2N7002E-T1-GE3
2N7002E-T1-GE3
Vishay / Siliconix
MOSFET N-CH 60V 240MA TO236
1+
$0.0634
5+
$0.0599
10+
$0.0563
更多的价格
数量
597,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
60 V
240mA (Ta)
10V
3Ohm @ 250mA, 10V
0.6 nC @ 4.5 V
±20V
21 pF @ 5 V
350mW (Ta)
TO-236
-
TP0610K-T1-GE3
TP0610K-T1-GE3
Vishay / Siliconix
MOSFET P-CH 60V 185MA SOT23-3
1+
$0.0368
5+
$0.0347
10+
$0.0327
更多的价格
数量
555,555 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
60 V
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
1.7 nC @ 15 V
±20V
23 pF @ 25 V
350mW (Ta)
SOT-23-3 (TO-236)
-
SI2307BDS-T1-E3
SI2307BDS-T1-E3
Vishay / Siliconix
MOSFET P-CH 30V 2.5A SOT23-3
1+
$0.2028
5+
$0.1915
10+
$0.1803
更多的价格
数量
543,899 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
2.5A (Ta)
4.5V, 10V
78mOhm @ 3.2A, 10V
15 nC @ 10 V
±20V
380 pF @ 15 V
750mW (Ta)
SOT-23-3 (TO-236)
-

单 FET，MOSFET

离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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