晶体管 - 双极 (BJT) - 单
结果:
21,977
Manufacturer
Series
Vce Saturation (Max) @ Ib, Ic
DC Current Gain (hFE) (Min) @ Ic, Vce
Supplier Device Package
Power - Max
Package / Case
Frequency - Transition
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Current - Collector Cutoff (Max)
Qualification
Operating Temperature
Transistor Type
Noise Figure (dB Typ @ f)
Gain
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Resistor - Base (R1)
Power Dissipation (Max)
Resistor - Emitter Base (R2)
Vgs(th) (Max) @ Id
Voltage - Supply
Drain to Source Voltage (Vdss)
Mounting Type
Drive Voltage (Max Rds On, Min Rds On)
Current - Supply
Power (Watts)
Configuration
Vgs (Max)
Function
Voltage - Rated
Test Condition
Current Rating (Amps)
Technology
Grade
FET Type
Input Type
FET Feature
NTC Thermistor
Input Capacitance (Cies) @ Vce
Data Interface
IGBT Type
Sampling Rate (Per Second)
Output Type
Vce(on) (Max) @ Vge, Ic
Type
Number of Circuits
Interface
Current - Output (Max)
Input
Number of Channels
Current - Collector Pulsed (Icm)
Gate Charge
Reverse Recovery Time (trr)
Td (on/off) @ 25°C
Features
Applications
Switching Energy
Gain Bandwidth Product
Number of Inputs
Voltage - DC Reverse (Vr) (Max)
Number of Bits
Sensing Range
Current - Average Rectified (Io)
Operating Temperature - Junction
Current - Reverse Leakage @ Vr
Number of A/D Converters
Rise / Fall Time (Typ)
Receiver Hysteresis
Duplex
Specifications
Protocol
Resolution (Bits)
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Voltage - Supply, Digital
-3db Bandwidth
Switch Type
Voltage - Output (Max)
Voltage - Input Offset
Voltage - Forward (Vf) (Max) @ If
Number of Drivers/Receivers
Voltage - Supply Span (Max)
Polarization
Voltage - Supply, Analog
Current - Input Bias
Current Transfer Ratio (Min)
Voltage - Forward (Vf) (Typ)
Amplifier Type
Architecture
Capacitance @ Vr, F
Voltage - Isolation
Voltage - Load
Reference Type
Voltage - Supply Span (Min)
Current - Output / Channel
Vce Saturation (Max)
Turn On / Turn Off Time (Typ)
Current Transfer Ratio (Max)
Current - Supply (Max)
Output Configuration
Voltage Supply Source
Ratio - S/H
Data Rate
Speed
Ratio - Input
Slew Rate
Rds On (Typ)
Number of Outputs
Fault Protection
Current - DC Forward (If) (Max)
结果：21,977
晶体管 - 双极 (BJT) - 单
离散双极晶体管（BJT）经常用于构建模拟信号放大器，如音频和无线电。作为最早被大规模生产的半导体器件之一，它们的特性不适合高频开关和高电流/电压操作，但它们仍然是需要在重现模拟信号时具有最小噪声和失真的应用中的热门选择。
BJT的结构由三个掺杂的半导体区域组成：发射区、基区和集电区。基区夹在发射区和集电区之间，形成两个p-n结。基区相对于发射区和集电区而言是薄且轻掺杂的，以允许对器件的导电性进行控制。
BJT的特征包括增益、带宽、集电极-发射极饱和电压和击穿电压。增益是输出电流与输入电流的比值，而带宽是晶体管有效工作的频率范围。集电极-发射极饱和电压是晶体管开启时集电极和发射极间的电压降，而击穿电压则是晶体管能承受的最大电压，不会损坏晶体管。
与其他器件类型相比，BJT的特性不太适用于高频开关和高电流/电压操作。然而，它们仍然广泛应用于需要在重现模拟信号时具有最小噪声和失真的应用中。这是因为它们的输入和输出阻抗相对较低，非常适合用于需要匹配或缓冲的电路中。
总之，离散双极晶体管（BJT）广泛用于构建模拟信号放大器，例如音频和无线电。虽然它们的特性可能不适用于高频或高电流/电压应用，但在需要在重现模拟信号时具有最小噪声和失真的应用中，它们仍然是热门选择。
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