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单 FET，MOSFET

搜索结果
结果:
44,485
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
结果：44,485
选择
图片产品详情单价可用性ECAD 模型SeriesMounting TypeOperating TemperaturePackage / CaseFET TypeDrain to Source Voltage (Vdss)Supplier Device PackageGradeTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
BSS138-TP
1+
$0.0164
5+
$0.0155
10+
$0.0145
更多的价格
数量
4,365,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
50 V
SOT-23
-
MOSFET (Metal Oxide)
-
3.5Ohm @ 220mA, 10V
1.5V @ 1mA
-
220mA (Tj)
4.5V, 10V
±20V
60 pF @ 25 V
350mW
-
2N7002K-AU_R1_000A2
2N7002K-AU_R1_000A2
PANJIT
60V N-CHANNEL ENHANCEMENT MODE M
1+
$0.0164
5+
$0.0155
10+
$0.0145
更多的价格
数量
3,501,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
SOT-23
Automotive
MOSFET (Metal Oxide)
-
3Ohm @ 500mA, 10V
2.5V @ 250µA
0.8 nC @ 5 V
300mA (Ta)
4.5V, 10V
±20V
35 pF @ 25 V
500mW (Ta)
AEC-Q101
DMN10H120SFG-13
DMN10H120SFG-13
Diodes Incorporated
MOSFET N-CH 100V 3.8A PWRDI3333
1+
$0.2517
5+
$0.2378
10+
$0.2238
更多的价格
数量
2,925,847 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerVDFN
N-Channel
100 V
PowerDI3333-8
-
MOSFET (Metal Oxide)
-
110mOhm @ 3.3A, 10V
3V @ 250µA
10.6 nC @ 10 V
3.8A (Ta)
6V, 10V
±20V
549 pF @ 50 V
1W (Ta)
-
DMN2230U-7
DMN2230U-7
Diodes Incorporated
MOSFET N-CH 20V 2A SOT23-3
1+
$0.2517
5+
$0.2378
10+
$0.2238
更多的价格
数量
1,593,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
20 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
110mOhm @ 2.5A, 4.5V
1V @ 250µA
-
2A (Ta)
1.8V, 4.5V
±12V
188 pF @ 10 V
600mW (Ta)
-
XP152A12C0MR-G
XP152A12C0MR-G
Torex Semiconductor Ltd.
MOSFET P-CH 20V 700MA SOT23
1+
$0.1636
5+
$0.1545
10+
$0.1455
更多的价格
数量
1,500,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TA)
TO-236-3, SC-59, SOT-23-3
P-Channel
20 V
SOT-23
-
MOSFET (Metal Oxide)
-
300mOhm @ 400mA, 4.5V
1.2V @ 1mA
-
700mA (Ta)
2.5V, 4.5V
±12V
180 pF @ 10 V
500mW (Ta)
-
2N7002,215
2N7002,215
Nexperia
MOSFET N-CH 60V 300MA TO236AB
1+
$0.0159
5+
$0.0150
10+
$0.0141
更多的价格
数量
1,313,632 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchMOS™
Surface Mount
-65°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
TO-236AB
-
MOSFET (Metal Oxide)
-
5Ohm @ 500mA, 10V
2.5V @ 250µA
-
300mA (Tc)
10V
±30V
50 pF @ 10 V
830mW (Ta)
-
DMN3404L-7
DMN3404L-7
Diodes Incorporated
MOSFET N-CH 30V 5.8A SOT23-3
1+
$0.0378
5+
$0.0357
10+
$0.0336
更多的价格
数量
1,109,943 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
30 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
28mOhm @ 5.8A, 10V
2V @ 250µA
9.2 nC @ 10 V
5.8A (Ta)
3V, 10V
±20V
386 pF @ 15 V
720mW (Ta)
-
2V7002KT1G
2V7002KT1G
onsemi
MOSFET N-CH 60V 320MA SOT23
1+
$0.0579
5+
$0.0547
10+
$0.0515
更多的价格
数量
1,106,570 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
60 V
SOT-23-3 (TO-236)
Automotive
MOSFET (Metal Oxide)
-
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
0.7 nC @ 4.5 V
320mA (Ta)
4.5V, 10V
±20V
24.5 pF @ 20 V
300mW (Tj)
AEC-Q101
SI2318CDS-T1-GE3
SI2318CDS-T1-GE3
Vishay / Siliconix
MOSFET N-CH 40V 5.6A SOT23-3
1+
$0.2258
5+
$0.2133
10+
$0.2007
更多的价格
数量
1,097,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
40 V
SOT-23-3 (TO-236)
-
MOSFET (Metal Oxide)
-
42mOhm @ 4.3A, 10V
2.5V @ 250µA
9 nC @ 10 V
5.6A (Tc)
4.5V, 10V
±20V
340 pF @ 20 V
1.25W (Ta), 2.1W (Tc)
-
TSM2303CX RFG
TSM2303CX RFG
Taiwan Semiconductor
MOSFET P-CHANNEL 30V 1.3A SOT23
1+
$0.1259
5+
$0.1189
10+
$0.1119
更多的价格
数量
963,062 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
30 V
SOT-23
-
MOSFET (Metal Oxide)
-
180mOhm @ 1.3A, 10V
3V @ 250µA
3.2 nC @ 4.5 V
1.3A (Ta)
4.5V, 10V
±20V
565 pF @ 10 V
700mW (Ta)
-
STF140N6F7
STF140N6F7
STMicroelectronics
MOSFET N-CH 60V 70A TO220FP
1+
$0.6545
5+
$0.6182
10+
$0.5818
更多的价格
数量
950,102 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
STripFET™
Through Hole
175°C (TJ)
TO-220-3 Full Pack
N-Channel
60 V
TO-220FP
-
MOSFET (Metal Oxide)
-
3.5mOhm @ 35A, 10V
4V @ 250µA
55 nC @ 10 V
70A (Tc)
10V
±20V
3100 pF @ 25 V
33W (Tc)
-
DMP21D2UFA-7B
DMP21D2UFA-7B
Diodes Incorporated
MOSFET P-CH 20V 330MA 3DFN
1+
$0.1510
5+
$0.1427
10+
$0.1343
更多的价格
数量
924,391 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
P-Channel
20 V
X2-DFN0806-3
-
MOSFET (Metal Oxide)
-
1Ohm @ 200mA, 4.5V
1V @ 250µA
0.8 nC @ 4.5 V
330mA (Ta)
1.5V, 4.5V
±8V
49 pF @ 15 V
360mW (Ta)
-
NTK3043NT1G
NTK3043NT1G
onsemi
MOSFET N-CH 20V 210MA SOT723
1+
$0.0629
5+
$0.0594
10+
$0.0559
更多的价格
数量
914,601 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
SOT-723
N-Channel
20 V
SOT-723
-
MOSFET (Metal Oxide)
-
3.4Ohm @ 10mA, 4.5V
1.3V @ 250µA
-
210mA (Ta)
1.65V, 4.5V
±10V
11 pF @ 10 V
310mW (Ta)
-
TSM2309CX RFG
TSM2309CX RFG
Taiwan Semiconductor
MOSFET P-CHANNEL 60V 3.1A SOT23
1+
$0.1309
5+
$0.1236
10+
$0.1164
更多的价格
数量
910,835 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
60 V
SOT-23
-
MOSFET (Metal Oxide)
-
190mOhm @ 3A, 10V
2.5V @ 250µA
8.2 nC @ 10 V
3.1A (Tc)
4.5V, 10V
±20V
425 pF @ 30 V
1.56W (Tc)
-
MCAC25P10YHE3-TP
1+
$0.7804
5+
$0.7371
10+
$0.6937
更多的价格
数量
905,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerTDFN
P-Channel
100 V
DFN5060
Automotive
MOSFET (Metal Oxide)
-
55mOhm @ 20A, 10V
2.5V @ 250µA
40 nC @ 10 V
25A
4.5V, 10V
±20V
2200 pF @ 50 V
70W (Tj)
AEC-Q101
RZM002P02T2L
RZM002P02T2L
ROHM Semiconductor
MOSFET P-CH 20V 200MA VMT3
1+
$0.0352
5+
$0.0333
10+
$0.0313
更多的价格
数量
901,002 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
SOT-723
P-Channel
20 V
VMT3
-
MOSFET (Metal Oxide)
-
1.2Ohm @ 200mA, 4.5V
1V @ 100µA
1.4 nC @ 4.5 V
200mA (Ta)
1.2V, 4.5V
±10V
115 pF @ 10 V
150mW (Ta)
-
FDV303N
FDV303N
onsemi
MOSFET N-CH 25V 680MA SOT23
1+
$0.0629
5+
$0.0594
10+
$0.0559
更多的价格
数量
878,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
N-Channel
25 V
SOT-23-3
-
MOSFET (Metal Oxide)
-
450mOhm @ 500mA, 4.5V
1.5V @ 250µA
2.3 nC @ 4.5 V
680mA (Ta)
2.7V, 4.5V
±8V
50 pF @ 10 V
350mW (Ta)
-
SI9407BDY-T1-GE3
SI9407BDY-T1-GE3
Vishay / Siliconix
MOSFET P-CH 60V 4.7A 8SO
1+
$0.2517
5+
$0.2378
10+
$0.2238
更多的价格
数量
859,880 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
TrenchFET®
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
P-Channel
60 V
8-SOIC
-
MOSFET (Metal Oxide)
-
120mOhm @ 3.2A, 10V
3V @ 250µA
22 nC @ 10 V
4.7A (Tc)
4.5V, 10V
±20V
600 pF @ 30 V
2.4W (Ta), 5W (Tc)
-
CSD13381F4
CSD13381F4
Texas Instruments
MOSFET N-CH 12V 2.1A 3PICOSTAR
1+
$0.0503
5+
$0.0476
10+
$0.0448
更多的价格
数量
850,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
NexFET™
Surface Mount
-55°C ~ 150°C (TJ)
3-XFDFN
N-Channel
12 V
3-PICOSTAR
-
MOSFET (Metal Oxide)
-
180mOhm @ 500mA, 4.5V
1.1V @ 250µA
1.4 nC @ 4.5 V
2.1A (Ta)
1.8V, 4.5V
8V
200 pF @ 6 V
500mW (Ta)
-
FDN338P
FDN338P
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.1259
5+
$0.1189
10+
$0.1119
更多的价格
数量
845,095 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-236-3, SC-59, SOT-23-3
P-Channel
20 V
SOT-23-3
MOSFET (Metal Oxide)
-
115mOhm @ 1.6A, 4.5V
1.5V @ 250µA
6.2 nC @ 4.5 V
1.6A (Ta)
2.5V, 4.5V
±8V
451 pF @ 10 V
500mW (Ta)

单 FET，MOSFET

离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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