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OptiMOS™ 5 系列, 单 FET，MOSFET
结果:
127
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
结果：127
搜索条目:
OptiMOS™ 5
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | FET Type | Operating Temperature | Grade | Technology | FET Feature | Series | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Supplier Device Package | Package / Case | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 150 V | 16.2A (Ta), 122A (Tc) | 8V, 10V | 6.3mOhm @ 50A, 10V | 4.6V @ 163µA | 63 nC @ 10 V | ±20V | 4800 pF @ 75 V | 3.8W (Ta), 214W (Tc) | PG-HSOG-8 | 8-PowerSMD, Gull Wing | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 80 V | 37A (Ta), 330A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.8V @ 230µA | 180 nC @ 10 V | ±20V | 13000 pF @ 40 V | 3.8W (Ta), 300W (Tc) | PG-HDSOP-16-2 | 16-PowerSOP Module | - | ||
 | 联系我们 | 13,006 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 100 V | 205A (Tc) | 6V, 10V | 1.83mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | 3.8W (Ta), 375W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 100 V | 33A (Ta), 205A (Tc) | 6V, 10V | 1.83mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | 3.8W (Ta), 375W (Tc) | PG-TO220-3 | TO-220-3 | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 100 V | 10A (Ta), 44A (Tc) | 4.5V, 10V | 14.6mOhm @ 22A, 10V | 2.3V @ 23µA | 10 nC @ 4.5 V | ±20V | 1300 pF @ 50 V | 2.5W (Ta), 52W (Tc) | PG-TDSON-8-6 | 8-PowerTDFN | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 100 V | 12A (Ta), 59A (Tc) | 4.5V, 10V | 10.9mOhm @ 20A, 10V | 2.3V @ 28µA | 24 nC @ 10 V | ±20V | 1600 pF @ 50 V | 2.5W (Ta), 60W (Tc) | PG-TDSON-8 | 8-PowerTDFN | - | ||
 | 联系我们 | 16,778 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | Standard | OptiMOS™ 5 | 100 V | 40A (Tc) | 4.5V, 10V | 14.6mOhm @ 20A, 10V | 2.3V @ 23µA | 3.2 nC @ 4.5 V | ±20V | 1300 pF @ 50 V | 52W (Tc) | PG-TSDSON-8-FL | 8-PowerTDFN | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 60 V | 23A (Ta), 135A (Tc) | 4.5V, 10V | 2.8mOhm @ 50A, 10V | 2.3V @ 38µA | 56 nC @ 10 V | ±20V | 3500 pF @ 30 V | 3W (Ta), 100W (Tc) | PG-TDSON-8 | 8-PowerTDFN | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 25 V | 41A (Ta), 298A (Tc) | - | 650mOhm @ 20A, 10V | 2V @ 250µA | 82.1 nC @ 10 V | ±16V | 5453 pF @ 12 V | 2.1W (Ta), 89W (Tc) | IPAK (TO-251AA) | TO-251-3 Short Leads, IPak, TO-251AA | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 80 V | 52A (Ta), 169A (Tc) | 6V, 10V | 2.9mOhm @ 150A, 10V | 3.8V @ 108µA | 87 nC @ 10 V | ±20V | 6500 pF @ 40 V | 168W (Tc) | PG-HSOF-8-1 | 8-PowerSFN | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 60 V | 41A (Ta), 348A (Tc) | 4.5V, 10V | 0.9mOhm @ 50A, 10V | 2.3V @ 147µA | 209 nC @ 10 V | ±20V | 13000 pF @ 30 V | 3W (Ta), 214W (Tc) | PG-TSON-8-3 | 8-PowerTDFN | - | ||
 | 联系我们 | 190 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount, Wettable Flank | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 150 V | 114A (Tc) | 8V, 10V | 7.4mOhm @ 50A, 10V | 4.6V @ 136µA | 52 nC @ 10 V | ±20V | 4000 pF @ 75 V | 214W (Tc) | PG-TSON-8-3 | 8-PowerTDFN | - | ||
| 联系我们 | 11,458 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 80 V | 28A (Ta), 237A (Tc) | 6V, 10V | 1.9mOhm @ 50A, 10V | 3.8V @ 146µA | 117 nC @ 10 V | ±20V | 8600 pF @ 40 V | 3W (Ta), 214W (Tc) | PG-TSON-8-3 | 8-PowerTDFN | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 100 V | 31A (Ta), 279A (Tc) | 6V, 10V | 1.9mOhm @ 100A, 10V | 3.8V @ 210µA | 160 nC @ 10 V | ±20V | 12000 pF @ 50 V | 3.8W (Ta), 300W (Tc) | PG-HDSOP-16-2 | 16-PowerSOP Module | - | ||
 | 联系我们 | 1,800 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 60 V | 53A (Ta), 454A (Tc) | 6V, 10V | 0.75mOhm @ 150A, 10V | 3.3V @ 280µA | 261 nC @ 10 V | ±20V | 21000 pF @ 30 V | 3.8W (Ta), 375W (Tc) | PG-HSOG-8-1 | 8-PowerSMD, Gull Wing | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 100 V | 7.7A (Ta), 37A (Tc) | 4.5V, 10V | 16.9mOhm @ 20A, 10V | 2.3V @ 18µA | 15 nC @ 10 V | ±20V | 1000 pF @ 50 V | 2.1W (Ta), 43W (Tc) | PG-TSDSON-8-26 | 8-PowerTDFN | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 80 V | 15.6A (Ta), 99A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.3V @ 47µA | 38 nC @ 10 V | ±20V | 3250 pF @ 40 V | 2.5W (Ta), 100W (Tc) | PG-TTFN-9-3 | 9-PowerTDFN | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 25 V | 47A (Ta), 310A (Tc) | 4.5V, 10V | 0.58mOhm @ 20A, 10V | 2V @ 250µA | 82 nC @ 10 V | ±16V | 5453 pF @ 12 V | 2.1W (Ta), 89W (Tc) | PG-WHSON-8-1 | 8-PowerWDFN | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 150°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 25 V | 47A (Ta), 310A (Tc) | 4.5V, 10V | 0.58mOhm @ 20A, 10V | 2V @ 250µA | 82 nC @ 10 V | ±16V | 5453 pF @ 12 V | 2.1W (Ta), 89W (Tc) | PG-WHTFN-9-1 | 9-PowerWDFN | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | N-Channel | -55°C ~ 175°C (TJ) | - | MOSFET (Metal Oxide) | - | OptiMOS™ 5 | 60 V | 24A (Ta), 151A (Tc) | 4.5V, 10V | 2.2mOhm @ 20A, 10V | 2.3V @ 48µA | 53 nC @ 10 V | ±20V | 4420 pF @ 30 V | 2.5W (Ta), 100W (Tc) | PG-WHSON-8 | 8-PowerWDFN | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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