- 首页
- 产品索引
- 分立半导体产品
- 晶体管
- FET，MOSFET
- 单 FET，MOSFET
OptiMOS™ 5 系列, 单 FET，MOSFET
结果:
127
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Mounting Type
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
结果：127
搜索条目:
OptiMOS™ 5
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | FET Type | Grade | Package / Case | Technology | FET Feature | Supplier Device Package | Series | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8 | OptiMOS™ 5 | 100 V | 8.8A (Ta), 37A (Tc) | 4.5V, 10V | 16.9mOhm @ 20A, 10V | 2.3V @ 18µA | 15 nC @ 10 V | ±20V | 1000 pF @ 50 V | 2.5W (Ta), 43W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TSDSON-8-25 | OptiMOS™ 5 | 60 V | 17A (Ta), 86A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.3V @ 26µA | 39 nC @ 10 V | ±20V | 2500 pF @ 30 V | 2.5W (Ta), 65W (Tc) | - | ||
 | 联系我们 | 1,184 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | Standard | PG-TSDSON-8-FL | OptiMOS™ 5 | 100 V | 40A (Tc) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.3V @ 36µA | 22 nC @ 10 V | ±20V | 2100 pF @ 50 V | 69W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-46 | OptiMOS™ 5 | 100 V | 13A (Ta), 71A (Tc) | 4.5V, 10V | 7.8mOhm @ 50A, 10V | 2.3V @ 40µA | 33 nC @ 10 V | ±20V | 2200 pF @ 50 V | 2.5W (Ta), 74W (Tc) | - | ||
| 联系我们 | 4,900 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-6 | OptiMOS™ 5 | 100 V | 40A (Tc) | 4.5V, 10V | 9.6mOhm @ 20A, 10V | 2.3V @ 36µA | 14.6 nC @ 4.5 V | ±20V | 2100 pF @ 50 V | 83W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TSDSON-8-FL | OptiMOS™ 5 | 25 V | 35A (Ta), 40A (Tc) | 4.5V, 10V | 1.1mOhm @ 20A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±16V | 3400 pF @ 12 V | 2.1W (Ta), 69W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TSON-8-5 | OptiMOS™ 5 | 80 V | 15.6A (Ta), 99A (Tc) | 4.5V, 10V | 4.6mOhm @ 20A, 10V | 2.3V @ 47µA | 38 nC @ 10 V | ±20V | 3250 pF @ 40 V | 2.5W (Ta), 100W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-7 | OptiMOS™ 5 | 100 V | 22A (Ta), 150A (Tc) | 4.5V, 10V | 3.6mOhm @ 50A, 10V | 2.3V @ 92µA | 73 nC @ 10 V | ±20V | 5190 pF @ 50 V | 2.5W (Ta), 125W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerWDFN | MOSFET (Metal Oxide) | - | PG-WSON-8-2 | OptiMOS™ 5 | 80 V | 144A (Tc) | 6V, 10V | 3.3mOhm @ 50A, 10V | 3.8V @ 76µA | 66 nC @ 10 V | ±20V | 4600 pF @ 40 V | 136W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-7 | OptiMOS™ 5 | 100 V | 16A (Ta), 100A (Tc) | 6V, 10V | 5mOhm @ 50A, 10V | 3.8V @ 72µA | 61 nC @ 10 V | ±20V | 4300 pF @ 50 V | 3W (Ta), 136W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-7 | OptiMOS™ 5 | 150 V | 56A (Tc) | 8V, 10V | 16mOhm @ 28A, 10V | 4.6V @ 60µA | 23.1 nC @ 10 V | ±20V | 1820 pF @ 75 V | 96W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-7 | OptiMOS™ 5 | 150 V | 80A (Tc) | 8V, 10V | 9.3mOhm @ 40A, 10 | 4.6V @ 107µA | 33 nC @ 10 V | ±20V | 2400 pF @ 75 V | 139W (Tc) | - | ||
| 联系我们 | 65,288 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TSDSON-8-25 | OptiMOS™ 5 | 60 V | 13A (Ta), 56A (Tc) | 4.5V, 10V | 7.3mOhm @ 20A, 10V | 2.3V @ 15µA | 23 nC @ 10 V | ±20V | 1400 pF @ 30 V | 2.5W (Ta), 44W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-7 | OptiMOS™ 5 | 100 V | 14A (Ta), 79A (Tc) | 4.5V, 10V | 7mOhm @ 40A, 10V | 2.3V @ 49µA | 20 nC @ 4.5 V | ±20V | 2700 pF @ 50 V | 2.5W (Ta), 83W (Tc) | - | ||
| 联系我们 | 4,775 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | N-Channel | - | 8-PowerTDFN | MOSFET (Metal Oxide) | - | PG-TDSON-8-7 | OptiMOS™ 5 | 100 V | 20A (Ta), 100A (Tc) | 4.5V, 10V | 3.4mOhm @ 50A, 10V | 2.3V @ 115µA | 46 nC @ 4.5 V | ±20V | 6500 pF @ 50 V | 156W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerWDFN | MOSFET (Metal Oxide) | - | PG-WSON-8-2 | OptiMOS™ 5 | 80 V | 202A (Tc) | 6V, 10V | 2.3mOhm @ 50A, 10V | 3.8V @ 115µA | 98 nC @ 10 V | ±20V | 6800 pF @ 40 V | 188W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 16-PowerSOP Module | MOSFET (Metal Oxide) | - | PG-HDSOP-16-2 | OptiMOS™ 5 | 150 V | 17.5A (Ta), 143A (Tc) | 8V, 10V | 5.4mOhm @ 50A, 10V | 4.6V @ 191µA | 73 nC @ 10 V | ±20V | 5700 pF @ 75 V | 3.8W (Ta), 250W (Tc) | - | ||
 | 联系我们 | 20,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerSFN | MOSFET (Metal Oxide) | - | PG-HSOF-8-1 | OptiMOS™ 5 | 80 V | 37A (Ta), 331A (Tc) | 6V, 10V | 1.4mOhm @ 150A, 10V | 3.8V @ 280µA | 200 nC @ 10 V | ±20V | 14000 pF @ 40 V | 300W (Tc) | - | ||
 | 联系我们 | 10,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | MOSFET (Metal Oxide) | - | PG-TO263-3 | OptiMOS™ 5 | 100 V | 33A (Ta), 176A (Tc) | 6V, 10V | 1.83mOhm @ 100A, 10V | 3.8V @ 270µA | 210 nC @ 10 V | ±20V | 16000 pF @ 50 V | 3.8W (Ta), 375W (Tc) | - | ||
 | 联系我们 | 1 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | N-Channel | - | 8-PowerWDFN | MOSFET (Metal Oxide) | - | PG-WSON-8-2 | OptiMOS™ 5 | 100 V | 171A (Tc) | 6V, 10V | 3mOhm @ 50A, 10V | 3.8V @ 115µA | 88 nC @ 10 V | ±20V | 6500 pF @ 50 V | 188W (Tc) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
需要快速可靠的报价吗?
请告诉我们您在找什么？