AlphaSGT™ 系列, 单 FET,MOSFET

结果:
131
Manufacturer
Series
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Mounting Type
Technology
Vgs (Max)
FET Feature
Grade
Qualification
结果131
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AlphaSGT™
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图片产品详情单价可用性ECAD 模型Mounting TypeOperating TemperatureFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdPackage / CaseSupplier Device PackageSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Power Dissipation (Max)QualificationInput Capacitance (Ciss) (Max) @ Vds
AONS66917
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
100A (Tc)
2.8V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
100 V
4.5V, 10V
3.5mOhm @ 20A, 10V
115 nC @ 10 V
±20V
6.2W (Ta), 215W (Tc)
-
5940 pF @ 50 V
AOD66920
MOSFET N-CH 100V 19.5A/70A TO252
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14,595 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
19.5A (Ta), 70A (Tc)
2.5V @ 250µA
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
AlphaSGT™
100 V
4.5V, 10V
8.2mOhm @ 20A, 10V
50 nC @ 10 V
±20V
6.2W (Ta), 89W (Tc)
-
2500 pF @ 50 V
AONS66920
MOSFET N-CH 100V 17.5A/48A 8DFN
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3,750 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
17.5A (Ta), 48A (Tc)
2.5V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
100 V
4.5V, 10V
8.2mOhm @ 20A, 10V
50 nC @ 10 V
±20V
5W (Ta), 56.5W (Tc)
-
2500 pF @ 50 V
AONR66922
MOSFET N-CH 100V 15A/50A 8DFN
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4,150 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
15A (Ta), 50A (Tc)
2.5V @ 250µA
8-PowerWDFN
8-DFN-EP (3.3x3.3)
AlphaSGT™
100 V
4.5V, 10V
9mOhm @ 15A, 10V
46 nC @ 10 V
±20V
4.1W (Ta), 52W (Tc)
-
2180 pF @ 50 V
AOUS66416
MOSFET N-CH 40V 33A/69A ULTRASO8
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
33A (Ta), 69A (Tc)
2.5V @ 250µA
3-PowerSMD, Flat Leads
UltraSO-8™
AlphaSGT™
40 V
4.5V, 10V
3.3mOhm @ 20A, 10V
50 nC @ 10 V
±20V
6.2W (Ta), 73.5W (Tc)
-
2575 pF @ 20 V
AON6268
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2,885 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TA)
N-Channel
-
MOSFET (Metal Oxide)
-
44A (Tc)
2.3V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
10V
4.7mOhm @ 20A, 10V
65 nC @ 10 V
±20V
56W (Tc)
-
2520 pF @ 30 V
AOB66920L
MOSFET N-CH 100V 22.5A/80A TO263
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
22.5A (Ta), 80A (Tc)
2.5V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
AlphaSGT™
100 V
4.5V, 10V
8mOhm @ 20A, 10V
50 nC @ 10 V
±20V
8.3W (Ta), 100W (Tc)
-
2500 pF @ 50 V
AOB66916L
MOSFET N-CH 100V 35.5/120A TO263
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440 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
35.5A (Ta), 120A (Tc)
3.5V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
AlphaSGT™
100 V
6V, 10V
3.6mOhm @ 20A, 10V
78 nC @ 10 V
±20V
8.3W (Ta), 277W (Tc)
-
6180 pF @ 50 V
AON6262E
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12,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
40A (Tc)
2.2V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
4.5V, 10V
6.2mOhm @ 20A, 10V
45 nC @ 10 V
±20V
48W (Tc)
-
1650 pF @ 30 V
AONS62614T
MOSFET N-CH 60V 39A/100A 8DFN
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
39A (Ta), 100A (Tc)
2.2V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
4.5V, 10V
2.5mOhm @ 20A, 10V
90 nC @ 10 V
±20V
7.5W (Ta), 142W (Tc)
-
3660 pF @ 30 V
AOB66616L
MOSFET N-CH 60V 38.5A/140A TO263
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6,185 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
38.5A (Ta), 140A (Tc)
3.4V @ 250µA
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
AlphaSGT™
60 V
6V, 10V
3.2mOhm @ 20A, 10V
60 nC @ 10 V
±20V
8.3W (Ta), 125W (Tc)
-
2870 pF @ 30 V
AON6266E
MOSFET N-CHANNEL 60V 24A 8DFN
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30,000 可用
可以立即发货
发货地: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
24A (Tc)
2.2V @ 250µA
8-PowerVDFN
8-DFN (5x6)
AlphaSGT™
60 V
4.5V, 10V
13.2mOhm @ 20A, 10V
10 nC @ 4.5 V
±20V
26W (Tc)
-
755 pF @ 30 V
AONR66924
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
13A (Ta), 32A (Tc)
2.6V @ 250µA
8-PowerVDFN
8-DFN-EP (3x3)
AlphaSGT™
100 V
4.5V, 10V
13.5mOhm @ 20A, 10V
40 nC @ 10 V
±20V
5W (Ta), 30W (Tc)
-
1450 pF @ 50 V
AONR66620
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
17.5A (Ta), 24A (Tc)
3.6V @ 250µA
8-PowerVDFN
8-DFN-EP (3x3)
AlphaSGT™
60 V
8V, 10V
9.1mOhm @ 20A, 10V
25 nC @ 10 V
±20V
5W (Ta), 27W (Tc)
-
1070 pF @ 30 V
AONS66620
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
17.5A (Ta), 24A (Tc)
3.6V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
8V, 10V
9mOhm @ 20A, 10V
25 nC @ 10 V
±20V
5W (Ta), 36.5W (Tc)
-
1070 pF @ 30 V
AONS66615
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
31A (Ta), 85A (Tc)
3.8V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
8V, 10V
3.5mOhm @ 20A, 10V
55 nC @ 10 V
±20V
6.2W (Ta), 78W (Tc)
-
2710 pF @ 30 V
AONS66919
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数量
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
23A (Ta), 85A (Tc)
2.6V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
100 V
4.5V, 10V
5.9mOhm @ 20A, 10V
66 nC @ 10 V
±20V
6.2W (Ta), 113W (Tc)
-
3420 pF @ 50 V
AONS66614
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
34.5A (Ta), 85A (Tc)
2.4V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
4.5V, 10V
2.9mOhm @ 20A, 10V
75 nC @ 10 V
±20V
6.2W (Ta), 78W (Tc)
-
3310 pF @ 30 V
AONS66609
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
50A (Ta), 304A (Tc)
3.3V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
60 V
8V, 10V
1.25mOhm @ 20A, 10V
126 nC @ 10 V
±20V
6.2W (Ta), 215W (Tc)
-
6350 pF @ 30 V
AONS66520
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数量
联系我们
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
-
MOSFET (Metal Oxide)
-
17A (Ta), 100A (Tc)
2.6V @ 250µA
8-PowerSMD, Flat Leads
8-DFN (5x6)
AlphaSGT™
150 V
4.5V, 10V
9.5mOhm @ 20A, 10V
65 nC @ 10 V
±20V
6.2W (Ta), 215W (Tc)
-
3200 pF @ 75 V

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。