- 首页
- 产品索引
- 分立半导体产品
- 晶体管
- FET，MOSFET
- 单 FET，MOSFET
SIPMOS® 系列, 单 FET，MOSFET
结果:
322
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
结果：322
搜索条目:
SIPMOS®
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Grade | Supplier Device Package | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
|---|
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 60 V | - | PG-SOT23 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 230mA (Ta) | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.4V @ 26µA | 2.9 nC @ 5 V | ±20V | 44 pF @ 25 V | 360mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | 200 V | - | PG-TO263-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 14.5A (Tc) | 10V | 200mOhm @ 9A, 10V | 4V @ 1mA | - | ±20V | 1120 pF @ 25 V | 95W (Tc) | - | ||
 | 联系我们 | 107,950 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 200 V | - | PG-SOT223-4 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14 nC @ 5 V | ±20V | 430 pF @ 25 V | 1.8W (Ta) | - | ||
 | 联系我们 | 50,000 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-Channel | 60 V | Automotive | PG-TO252-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 30A (Tc) | 10V | 75mOhm @ 21.5A, 10V | 4V @ 1.7mA | 48 nC @ 10 V | ±20V | 1535 pF @ 25 V | 125W (Tc) | AEC-Q101 | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 600 V | - | PG-SOT23-3-5 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 21mA (Ta) | - | 500Ohm @ 16mA, 10V | 1.6V @ 8µA | 1.4 nC @ 5 V | ±20V | 21 pF @ 25 V | 500mW (Ta) | - | ||
| 联系我们 | 445 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | P-Channel | 60 V | - | PG-TO263-3-2 | MOSFET (Metal Oxide) | SIPMOS® | - | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173 nC @ 10 V | ±20V | 5033 pF @ 25 V | 340W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | N-Channel | 100 V | - | PG-TO263-3-2 | MOSFET (Metal Oxide) | SIPMOS® | - | 21A (Tc) | 10V | 80mOhm @ 15A, 10V | 4V @ 44µA | 38.4 nC @ 10 V | ±20V | 865 pF @ 25 V | 90W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 200 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 660mA (Ta) | 0V, 10V | 1.8Ohm @ 660mA, 10V | 1V @ 400µA | 14 nC @ 5 V | ±20V | 430 pF @ 25 V | 1.8W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | TO-220-3 | N-Channel | 100 V | - | PG-TO220-3-1 | MOSFET (Metal Oxide) | SIPMOS® | - | 47A (Tc) | 4.5V, 10V | 26mOhm @ 33A, 10V | 2V @ 2mA | 135 nC @ 10 V | ±20V | 2500 pF @ 25 V | 175W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | TO-220-3 | N-Channel | 100 V | - | PG-TO220-3-1 | MOSFET (Metal Oxide) | SIPMOS® | - | 47A (Tc) | 10V | 33mOhm @ 33A, 10V | 4V @ 2mA | 105 nC @ 10 V | ±20V | 2500 pF @ 25 V | 175W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 175°C (TJ) | TO-220-3 | N-Channel | 100 V | - | PG-TO220-3-1 | MOSFET (Metal Oxide) | SIPMOS® | - | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240 nC @ 10 V | ±20V | 4540 pF @ 25 V | 250W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | P-Channel | 60 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 1.9A (Ta) | 10V | 300mOhm @ 1.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 410 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 940 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | P-Channel | 60 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 1.9A (Ta) | 4.5V, 10V | 300mOhm @ 1.9A, 10V | 2V @ 460µA | 20 nC @ 10 V | ±20V | 460 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 60 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17 nC @ 10 V | ±20V | 368 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 100 V | - | PG-SOT223-4 | MOSFET (Metal Oxide) | SIPMOS® | - | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2 nC @ 10 V | ±20V | 364 pF @ 25 V | 1.79W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 200 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 660mA (Ta) | 4.5V, 10V | 1.8Ohm @ 660mA, 10V | 1.8V @ 400µA | 16.1 nC @ 10 V | ±20V | 357 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | P-Channel | 100 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 680mA (Ta) | 4.5V, 10V | 1.8Ohm @ 680mA, 10V | 2V @ 170µA | 6.4 nC @ 10 V | ±20V | 146 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | P-Channel | 60 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8 nC @ 10 V | ±20V | 160 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | P-Channel | 250 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 430mA (Ta) | 4.5V, 10V | 4Ohm @ 430mA, 10V | 2V @ 370µA | 15.1 nC @ 10 V | ±20V | 262 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 100 V | - | PG-SOT223-4 | MOSFET (Metal Oxide) | SIPMOS® | - | 1.7A (Ta) | 5V | 310mOhm @ 1.7A, 5V | 2V @ 1mA | - | ±14V | 520 pF @ 25 V | 1.8W (Ta) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
需要快速可靠的报价吗?
请告诉我们您在找什么？