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SIPMOS® 系列, 单 FET，MOSFET
结果:
322
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
FET Feature
FET Type
Grade
Mounting Type
Qualification
Technology
结果：322
搜索条目:
SIPMOS®
选择 | 图片 | 产品详情 | 单价 | 可用性 | ECAD 模型 | Mounting Type | Operating Temperature | Package / Case | FET Type | Drain to Source Voltage (Vdss) | Grade | Supplier Device Package | Technology | Series | FET Feature | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Power Dissipation (Max) | Qualification |
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 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | P-Channel | 60 V | - | PG-SOT23 | MOSFET (Metal Oxide) | SIPMOS® | - | 170mA (Ta) | 2V @ 20µA | 4.5V, 10V | 8Ohm @ 170mA, 10V | 1.5 nC @ 10 V | ±20V | 19 pF @ 25 V | 360mW (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | 200 V | - | PG-TO220-3-1 | MOSFET (Metal Oxide) | SIPMOS® | - | 21A (Tc) | 4V @ 1mA | 10V | 130mOhm @ 13.5A, 10V | - | ±20V | 1900 pF @ 25 V | 125W (Tc) | - | ||
 | 联系我们 | 12,426 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | 200 V | - | PG-TO220-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 14.5A (Tc) | 4V @ 1mA | 5V | 200mOhm @ 9A, 5V | - | ±20V | 1120 pF @ 25 V | 95W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | 200 V | - | PG-TO220-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 13.5A (Tc) | 2V @ 1mA | 5V | 200mOhm @ 7A, 5V | - | ±20V | 1600 pF @ 25 V | 95W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | 200 V | - | PG-TO220-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 9.5A (Tc) | 4V @ 1mA | 10V | 400mOhm @ 6A, 10V | - | ±20V | 530 pF @ 25 V | 75W (Tc) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-220-3 | N-Channel | 200 V | - | PG-TO220-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 7A (Tc) | 4V @ 1mA | 10V | 400mOhm @ 4.5A, 10V | - | ±20V | 530 pF @ 25 V | 40W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 500 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 400mA (Ta) | 4V @ 1mA | 10V | 4Ohm @ 400mA, 10V | - | ±20V | 400 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 60 V | - | PG-SOT23 | MOSFET (Metal Oxide) | SIPMOS® | - | 200mA (Ta) | 2.3V @ 26µA | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.5 nC @ 10 V | ±20V | 56 pF @ 25 V | 360mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 60 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 2.9A (Ta) | 4V @ 20µA | 10V | 120mOhm @ 2.9A, 10V | 12 nC @ 10 V | ±20V | 340 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 400 V | - | PG-SOT223-4-21 | MOSFET (Metal Oxide) | SIPMOS® | - | 170mA (Ta) | 2.3V @ 94µA | 4.5V, 10V | 25Ohm @ 170mA, 10V | 5.9 nC @ 10 V | ±20V | 154 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 60 V | - | PG-SOT23 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 230mA (Ta) | 2.4V @ 26µA | 0V, 10V | 3.5Ohm @ 160mA, 10V | 2.9 nC @ 5 V | ±20V | 44 pF @ 25 V | 360mW (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 100 V | - | PG-SOT23 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 170mA (Ta) | 1.8V @ 50µA | 0V, 10V | 6Ohm @ 170mA, 10V | 2.8 nC @ 7 V | ±20V | 68 pF @ 25 V | 360mW (Ta) | - | ||
| 联系我们 | 6,888 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 60 V | Automotive | PG-SOT23 | MOSFET (Metal Oxide) | SIPMOS® | - | 200mA (Ta) | 1.8V @ 26µA | 4.5V, 10V | 5Ohm @ 500mA, 10V | 1.5 nC @ 10 V | ±20V | 45 pF @ 25 V | 360mW (Ta) | AEC-Q101 | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | N-Channel | 200 V | - | PG-TO252-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 7A (Tc) | 4V @ 1mA | 10V | 400mOhm @ 4.5A, 10V | 31.5 nC @ 10 V | ±20V | 530 pF @ 25 V | 40W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Through Hole | -55°C ~ 150°C (TJ) | TO-262-3 Long Leads, I²Pak, TO-262AA | N-Channel | 200 V | - | PG-TO262-3-1 | MOSFET (Metal Oxide) | SIPMOS® | - | 14.5A (Tc) | 4V @ 1mA | 5V | 200mOhm @ 9A, 5V | - | ±20V | 1120 pF @ 25 V | 95W (Tc) | - | ||
| 联系我们 | 2,500 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 400 V | - | PG-SOT223-4 | MOSFET (Metal Oxide) | SIPMOS® | - | 500mA (Ta) | 4V @ 1mA | 10V | 3Ohm @ 500mA, 10V | - | ±20V | 400 pF @ 25 V | 1.8W (Ta) | - | ||
| 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-261-4, TO-261AA | N-Channel | 800 V | - | PG-SOT223-4 | MOSFET (Metal Oxide) | SIPMOS® | - | 190mA (Ta) | 4V @ 1mA | 10V | 20Ohm @ 190mA, 10V | - | ±20V | 230 pF @ 25 V | 1.8W (Ta) | - | ||
 | 联系我们 | 30,120 可用 可以立即发货 发货地: HK | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-252-3, DPak (2 Leads + Tab), SC-63 | P-Channel | 100 V | - | PG-TO252-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 15A (Tc) | 2V @ 1.54mA | 4.5V, 10V | 200mOhm @ 11.3A, 10V | 62 nC @ 10 V | ±20V | 1490 pF @ 25 V | 128W (Tc) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 175°C (TJ) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | P-Channel | 60 V | - | PG-TO263-3 | MOSFET (Metal Oxide) | SIPMOS® | - | 18.7A (Ta) | 4V @ 1mA | 10V | 130mOhm @ 13.2A, 10V | 28 nC @ 10 V | ±20V | 860 pF @ 25 V | 81.1W (Ta) | - | ||
 | 联系我们 | 联系我们 | PCB Symbol, Footprint & 3D Model | Surface Mount | -55°C ~ 150°C (TJ) | TO-236-3, SC-59, SOT-23-3 | N-Channel | 250 V | - | PG-SOT23-3-5 | MOSFET (Metal Oxide) | SIPMOS® | Depletion Mode | 100mA (Ta) | 1V @ 56µA | 0V, 10V | 14Ohm @ 100mA, 10V | 3.5 nC @ 5 V | ±20V | 76 pF @ 25 V | 360mW (Ta) | - |
关于 单 FET，MOSFET
离散场效应晶体管（FET）是一种非常多功能的电子元件，用于各种应用，包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作，同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上，其他器件类型如绝缘栅双极晶体管（IGBT）会更具竞争力。对于低电压应用，FET通常优于IGBT，因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置，以适应特定的应用需求。例如，可以并联使用它们来增加电路的承载电流能力，或串联使用它们来增加电压等级。它们还可以与其他被动元件，如二极管和电容器结合使用，构成更复杂的电路。 除了多功能性和高效率外，FET还以其耐用性和可靠性而闻名。它们没有可动部件，因此不容易磨损。此外，它们可以在高温下工作而不降低性能，非常适合在恶劣环境中使用。 总之，离散场效应晶体管（FET）由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用，优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性，FET将继续在现代电子系统的发展中发挥重要作用。
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