POWER MOS 7® 系列, 单 FET,MOSFET

结果:
156
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Drain to Source Voltage (Vdss)
Package / Case
Vgs(th) (Max) @ Id
Operating Temperature
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Qualification
Technology
结果156
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POWER MOS 7®
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图片产品详情单价可用性ECAD 模型Operating TemperatureMounting TypeFET TypeGradePackage / CaseTechnologySeriesFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsSupplier Device PackagePower Dissipation (Max)Qualification
APT50M50L2LLG
MOSFET N-CH 500V 89A 264 MAX
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数量
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PCB Symbol, Footprint & 3D Model
-
Through Hole
N-Channel
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
POWER MOS 7®
-
89A (Tc)
5V @ 5mA
500 V
-
50mOhm @ 44.5A, 10V
200 nC @ 10 V
-
10550 pF @ 25 V
264 MAX™ [L2]
-
-
APT6010JLL
MOSFET N-CH 600V 47A ISOTOP
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数量
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PCB Symbol, Footprint & 3D Model
-
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
47A (Tc)
5V @ 2.5mA
600 V
-
100mOhm @ 23.5A, 10V
150 nC @ 10 V
-
6710 pF @ 25 V
ISOTOP®
-
-
APT6013JFLL
MOSFET N-CH 600V 39A ISOTOP
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数量
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PCB Symbol, Footprint & 3D Model
-
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
39A (Tc)
5V @ 2.5mA
600 V
-
130mOhm @ 19.5A, 10V
130 nC @ 10 V
-
5630 pF @ 25 V
ISOTOP®
-
-
APT30M30JLL
MOSFET N-CH 300V 88A ISOTOP
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数量
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PCB Symbol, Footprint & 3D Model
-
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
88A (Tc)
5V @ 2.5mA
300 V
-
30mOhm @ 44A, 10V
140 nC @ 10 V
-
7030 pF @ 25 V
ISOTOP®
-
-
APT10045JFLL
MOSFET N-CH 1000V 21A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
21A (Tc)
5V @ 2.5mA
1000 V
-
460mOhm @ 11.5A, 10V
154 nC @ 10 V
-
4350 pF @ 25 V
ISOTOP®
-
-
APT5024BFLLG
MOSFET N-CH 500V 22A TO247
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数量
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PCB Symbol, Footprint & 3D Model
-
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
22A (Tc)
5V @ 1mA
500 V
-
240mOhm @ 11A, 10V
43 nC @ 10 V
-
1900 pF @ 25 V
TO-247 [B]
-
-
APT1201R4BLLG
MOSFET N-CH 1200V 9A TO247
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数量
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PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
9A (Tc)
5V @ 1mA
1200 V
10V
1.4Ohm @ 4.5A, 10V
120 nC @ 10 V
±30V
2500 pF @ 25 V
TO-247-3
300W (Tc)
-
APT6029BFLLG
MOSFET N-CH 600V 21A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
21A (Tc)
5V @ 1mA
600 V
-
290mOhm @ 10.5A, 10V
65 nC @ 10 V
-
2615 pF @ 25 V
TO-247 [B]
300W (Tc)
-
APT20M34SLLG/TR
MOSFET N-CH 200V 74A D3PAK
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数量
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PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Surface Mount
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
POWER MOS 7®
-
74A (Tc)
5V @ 1mA
200 V
10V
34mOhm @ 37A, 10V
60 nC @ 10 V
±30V
3660 pF @ 25 V
D3PAK
403W (Tc)
-
APT30M61SLLG/TR
MOSFET N-CH 300V 54A D3PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Surface Mount
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
POWER MOS 7®
-
54A (Tc)
5V @ 1mA
300 V
10V
61mOhm @ 27A, 10V
64 nC @ 10 V
±30V
3720 pF @ 25 V
D3PAK
403W (Tc)
-
APT6029SLLG
MOSFET N-CH 600V 21A D3PAK
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Surface Mount
N-Channel
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
POWER MOS 7®
-
21A (Tc)
5V @ 1mA
600 V
-
290mOhm @ 10.5A, 10V
65 nC @ 10 V
-
2615 pF @ 25 V
D3PAK
-
-
APT20M34BLLG
MOSFET N-CH 200V 74A TO247
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数量
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PCB Symbol, Footprint & 3D Model
-
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
74A (Tc)
5V @ 1mA
200 V
-
34mOhm @ 37A, 10V
60 nC @ 10 V
-
3660 pF @ 25 V
TO-247 [B]
-
-
APT5014BFLLG
MOSFET N-CH 500V 35A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
35A (Tc)
5V @ 1mA
500 V
-
140mOhm @ 17.5A, 10V
72 nC @ 10 V
-
3261 pF @ 25 V
TO-247 [B]
-
-
APT6025BLLG
MOSFET N-CH 600V 24A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
24A (Tc)
5V @ 1mA
600 V
-
250mOhm @ 12A, 10V
65 nC @ 10 V
-
2910 pF @ 25 V
TO-247 [B]
-
-
APT6025BFLLG
MOSFET N-CH 600V 24A TO247
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Through Hole
N-Channel
-
TO-247-3
MOSFET (Metal Oxide)
POWER MOS 7®
-
24A (Tc)
5V @ 1mA
600 V
-
250mOhm @ 12A, 10V
65 nC @ 10 V
-
2910 pF @ 25 V
TO-247 [B]
-
-
APT30M36JFLL
MOSFET N-CH 300V 76A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
76A (Tc)
5V @ 2.5mA
300 V
-
36mOhm @ 38A, 10V
115 nC @ 10 V
-
6480 pF @ 25 V
ISOTOP®
-
-
APT10035JFLL
MOSFET N-CH 1000V 25A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
25A (Tc)
5V @ 2.5mA
1000 V
-
370mOhm @ 14A, 10V
186 nC @ 10 V
-
5185 pF @ 25 V
ISOTOP®
520W (Tc)
-
APT30M36JLL
MOSFET N-CH 300V 76A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
76A (Tc)
5V @ 2.5mA
300 V
-
36mOhm @ 38A, 10V
115 nC @ 10 V
-
6480 pF @ 25 V
ISOTOP®
-
-
APT50M50JLL
MOSFET N-CH 500V 71A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
71A (Tc)
5V @ 5mA
500 V
10V
50mOhm @ 35.5A, 10V
200 nC @ 10 V
±30V
10550 pF @ 25 V
ISOTOP®
595W (Tc)
-
APT60M75JFLL
MOSFET N-CH 600V 58A ISOTOP
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数量
联系我们
PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Chassis Mount
N-Channel
-
SOT-227-4, miniBLOC
MOSFET (Metal Oxide)
POWER MOS 7®
-
58A (Tc)
5V @ 5mA
600 V
10V
75mOhm @ 29A, 10V
195 nC @ 10 V
±30V
8930 pF @ 25 V
ISOTOP®
595W (Tc)
-

关于  单 FET,MOSFET

离散场效应晶体管(FET)是一种非常多功能的电子元件,用于各种应用,包括功率转换、电机控制、固态照明等。FET的一个关键优势是能够在高频率下进行开关操作,同时传输大量电流。这使得它们非常适合需要对输出信号进行精确控制的电路。 FET特别适用于电压等级在几百伏或更低的应用中。在这个范围之上,其他器件类型如绝缘栅双极晶体管(IGBT)会更具竞争力。对于低电压应用,FET通常优于IGBT,因为它们具有更快的开关速度、更好的效率和更简单的驱动电路。 使用离散FET的一个主要优点是可以以多种方式配置,以适应特定的应用需求。例如,可以并联使用它们来增加电路的承载电流能力,或串联使用它们来增加电压等级。它们还可以与其他被动元件,如二极管和电容器结合使用,构成更复杂的电路。 除了多功能性和高效率外,FET还以其耐用性和可靠性而闻名。它们没有可动部件,因此不容易磨损。此外,它们可以在高温下工作而不降低性能,非常适合在恶劣环境中使用。 总之,离散场效应晶体管(FET)由于其高开关频率、高承载电流能力和优异的效率而被广泛应用于各种应用中。它们特别适用于低电压应用,优于其他器件类型如IGBT。凭借其多功能性、耐用性和可靠性,FET将继续在现代电子系统的发展中发挥重要作用。